Vâlcu (Herbei), Elena Emanuela; Mușat, Viorica; Leedham, Timothy (Universitatea "Dunărea de Jos" din Galați, 2012)
The HfO2 thin-film is a very promising gate dielectric material for last
generation transistors. The paper presents the thermal decomposition of hafnium
ethoxide used as molecular precursor for obtaining hafnia thin ...