Parcourir 2012 fascicula9 nr3 par sujet "dielectric thin films"
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Thermal Decomposition of Hafnium Ethoxide-Mollecular Precursor for Hafnia Dielectric Thin Films
(Universitatea "Dunărea de Jos" din Galați, 2012)The HfO2 thin-film is a very promising gate dielectric material for last generation transistors. The paper presents the thermal decomposition of hafnium ethoxide used as molecular precursor for obtaining hafnia thin ...
